Improving light trapping and conversion efficiency …
Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods. Jia Zhi-Nan () 1,2, …
Amorphization of pure hafnium nanocontacts and continuous
The amorphization of pure metal NCs via the energization using a pulse voltage application is caused by rapid melting and subsequent rapid cooling through thermal conduction to the two electrodes connecting to the narrowest center region of the NCs. 3,22 ... IOPscience Google Scholar. Angell C. A. 1995 Science 267 1924. Crossref Google …
Converting SOI to sSOI through Amorphization and
Here, we demonstrate a new process to fabricate tensily strained Si On Insulator substrates (sSOI). The process is based on the epitaxial growth of Si 1-x Ge x on SOI substrate, the partial amorphization and crystallization of the Si/Si 1-x Ge x bilayers and the selective removal of the top Si 1-x Ge x film. Si tensile stress higher than 1.4 …
Ionoluminescence as Sensor of Structural Disorder in
formation and crystal amorphization. In particular, it will be shown that IL allows for a reliable determination of the amorphization threshold. The quartz samples used in this paper were prepared from 1-mm-thickcrystalwafers(z-cut)providedbyCrystran.They were cut into pieces of about 10 10mm2 and covered by a
FTIR study of silicon carbide amorphization by heavy ion
We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C–SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate.Irradiations were carried out at RT with 2.3 MeV 28 Si + ions and 3.0 MeV 84 Kr + ions for various …
The pressure induced amorphization and behavior of
Pressure-induced amorphization (PIA) of oxide materials was first observed for SiO 2 [1, 2], and similar studies on PIA of bulk materials have been reported subsequently [3–6].The importance of the physical phenomenon of PIA in nanoscale materials has recently begun to be investigated [7–10] and the topic of PIA in …
On the Manifestation of Ge Pre-Amorphization Implantation
8-inch p-type (100) silicon wafers with 10–12 Ω-cm resistivity were used as the starting material. All wafers were implanted by phosphorus (P) at 8 keV to a dosage of 3 × 10 15 cm −2, followed by dopant activation using 1050°C spike annealing.Afterwards, Ge PAI at 6 different conditions shown in Table I was employed in order to amorphize the …
SHVLOLFRQVRODU below the amorphization threshold …
FHOO below the amorphization threshold To cite this article: Peng Liang et al 2015 Chinese Phys. B 24 038801 View the article online for updates and enhancements. You may also like Initial activation behavior of boron at low temperatures with implantation doses Ruey-Dar Chang, Jui-Chang Lin and Bo-Wen Lee-Removal of Ion-Implanted Photoresists
Efficient amorphous silicon solar cells
Maxwell's curl equations were thoroughly followed for the electric field distribution and losses at the individual layers. The used two-dimensional FDTD …
On amorphization as a deformation mechanism …
At first considered as a curiosity, this phenomenon is emerging as a deformation mechanism in its own right. In the following we review the current …
Cooling and Amorphization …
The ablation and amorphization of crystalline Si by femtosecond and picosecond laser irradiations are reported in this paper. Laser pulse width was varied in …
Initial activation behavior of boron at low temperatures
In summary, annealing at low temperatures was performed to investigate the boron activation behavior with implantation doses below the amorphization threshold. The initial ramp of the activation level during RTA at temperatures below 400 °C was successfully analyzed using a test structure with deep junctions in corners.
Interface amorphization improving the mechanical
The diffraction peaks of Cu–Ta nanolaminates are mainly located at 33.8° and 43.3°, corresponding to β -Ta (002) and α -Cu (111), respectively. Besides, a halo peak appears at 2θ ≈ 38.9°, indicating the formation of an amorphous structure (A1). The intensity of both β -Ta and α -Cu decreases progressively as the decreasing of λ.
Pressure induced transformation and subsequent
The PDF data reveal that the amorphization is associated with disruptions of the long-range order of the NbO 6 octahedra and the NbO 7 pentagonal bipyramids, whereas the local edge-shares of octahedra and the local linkages of pentagonal bipyramids are largely preserved in their nearest neighbors. Upon compression, the transmittance of …
Defect-induced homogeneous amorphization of …
Ion beam-induced amorphization of Si, an issue which has important consequences for applications such as dopant implantation or defect engineering in …
Helium-ion-beam nanofabrication: extreme processes and
Helium ion beam (HIB) technology plays an important role in the extreme fields of nanofabrication. This paper reviews the latest developments in HIB technology as well as its extreme processing capabilities and widespread applications in nanofabrication. HIB-based nanofabrication includes direct-write milling, ion beam- induced deposition, …
Can amorphization take place in nanoscale interconnects?
For lower temperatures, stress induced amorphization phenomenon has been studied both computationally and [5–8] experimentally. It can be deduced from the literature that the key requirement of the amorphization process is large vacancy or defect concentration . In the absence of temperatures high enough to enhance atomic mobility, …
Solid–solid phase transitions in Fe nanowires induced by
Abstract. By means of classical molecular-dynamics simulations we investigate the solid–solid phase transition from a bcc to a close-packed crystal structure in cylindrical iron nanowires, induced by axial strain. The interatomic potential employed has been shown to be capable of describing the martensite–austenite phase transition in iron.
Nb K-edge x-ray absorption investigation of the pressure
Nb K-edge x-ray absorption spectroscopy is utilized to investigate the changes in the local structure of the A-site deficient double perovskite La 1/3 NbO 3 which undergoes a pressure induced irreversible amorphization. EXAFS results show that with increasing pressure up to 7.5 GPa, the average Nb–O bond distance decreases in agreement with …
Effect and Progress of the Amorphization Process for …
In the present study, we investigate the amorphization process of micro-scale silicon particles in a silicon dominant anode containing 70 %wt silicon over extended charge/discharge cycling in half-cells with a lithium reference electrode, …
Polishing and planarization of single crystal diamonds
In this regard, Pastewka et al [84, 87] employed MD simulations to establish an adequate investigation of anisotropic mechanical amorphization during the planarization process of diamond. Besides, the microscopic mechanism underlying the diamond polishing was experimentally investigation by applying a velocity of 30 m s −1 and a normal load ...
Effect and Progress of the Amorphization Process for
With a specific electrochemical capacity of 3579 mAh g Si −1, silicon is a promising candidate for next generation Li-ion batteries, as it exceeds the capacity of commonly used graphite by a factor of 10. 1,2 However, large volume changes upon (de-)alloying up to ∼300 % lead to mechanical stress in the active material resulting in …
Comprehensive modeling of ion-implant …
We have used the experimental data from [10] to determine α, β and Eact ( s ). The experimental data corresponds to the amorphous-crystalline transition …
Role of atomic-level defects and electronic energy loss on
The amorphization process has been explained by different models, and most of the theoretical treatments utilize a thermal spike model (i.e. a hot region around the ion trajectory containing a high concentration of excited electron carriers), which relies on local melting of the material caused by superheating in the thermal spike [11–16]. It ...
Re-amorphization of GeSbTe alloys not through a melt
The partial amorphization was observed as disappearance of long range order, increase in the transverse resistance and shift of the Fermi energy after TAUM treatment for more than 3 h. The results suggest new way to create an amorphous-like disordered state with a high resistance under the presence of magnetic field.
Amorphization by mechanical deformation
Amorphization of crystalline structures is a ubiquitous phenomenon in metals, ceramics, and intermetallic compounds. Although the amorphous phase generally has a higher Gibbs free energy than its crystalline counterpart, there are many methods by which amorphization can be generated. The requirement to create an amorphous phase from …
Defect-induced homogeneous amorphization of silicon: the
The amorphization threshold can be influenced both by energetics and kinetics, in particular the competition between defect clustering and recombination. A full characterization of defect kinetics by means of MD–EDIP is beyond the scope of the present work; however, in order to better understand some observed trends in amorphization, …
Mechanically induced amorphization of small molecule …
Mechanically induced amorphization of small molecule organic crystals Yifei Zeng1, Lorena Alzate-Vargas2, Chunyu Li 2, Rachel Graves3, Jeff Brum3, Alejandro Strachan2 and Marisol Koslowski1 1 School of Mechanical Engineering, Purdue University, West Lafayette, IN, United States of America 2 School of Materials Engineering, Purdue University, West …
Nanograting layers of Si
The resistivity measurements were made in two directions: along and perpendicular to the strips of the structure and showed the existence of an anisotropy. High-resolution image. In this case also, The layer quality was checked by means of grazing incidence x-ray structural analysis and there was no influence of nanograting on the …
Crystalline Silicon vs. Amorphous Silicon: the
Search all IOPscience content. Article Lookup. Select journal (required) Volume number: Issue number (if known): Article or page number: IOP Conference Series: Earth and Environmental Science. Paper • The following article is Open access. Crystalline Silicon vs. Amorphous Silicon: the Significance of Structural Differences in Photovoltaic ...
Impact of Ge pre-amorphization implantation on Co/Co-Ti/n
In state-of-the-art FinFETs, Ge pre-amorphization implantation (Ge PAI) has been widely employed into TiSi x-based contacts to successfully achieve extremely low ρ c, 15,16) which has the benefits of point defect annihilation, silicidation enhancement and smooth interface. 17–20) In this work, the Co/Co-Ti/n +-Si contacts with and without Ge ...
Swift heavy ion-beam induced amorphization and
Processes of amorphization and recrystallization of materials by swift heavy ion irradiations have recently become hot topics due to new molecular-dynamics simulations of the thermal spike induced by electronic excitations [].As a matter of fact, experimental evidence was already accumulated over the last 20 years on several ionic-covalent …
Pulsed-Laser-Induced Microcrystallization and …
amorphization. It is clarified that these two phenomenons originated from the same melt condition. The only difference between microcrystallization and amorphization is the nucleation among supercooled Si film. 2. Experiments In order to observe the fast melt and solidification phe-nomenon, in-situmeasurements of the transient reflectance
Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+
Impact of Ge pre-amorphization implantation on Co/Co-Ti/n +-Si contacts in advanced Co interconnects Dan Zhang 1,2, Jing Xu 1, Jianfeng Gao 1, Anyan Du 1, Jing Zhang 2,3, Shujuan Mao 1, Yang Men 3, Pengfei Liu 3, Shihai Gu 1,2, Xue Luo 1,2, Yaodong Liu 1,2, Guilei Wang 1, Junfeng Li 1, Chao Zhao 1,2, Wenwu Wang 1,2, …
